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  type 90v 1.5a BYS11-90 1 of 2 web site: www.taychipst.com features e-mail: sales@taychipst.com maximum ratings and electrical characteristics  high efficiency  low power losses  very low switching losses  low reverse current  high surge capability schottky barrier rectifier absolute maximum ratings t j = 25  c parameter test conditions type symbol value unit reverse voltage= repetitive peak reverse voltage v r = v rrm 90 v peak forward surge current t p =10ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j =t stg 55...+150  c maximum thermal resistance t j = 25  c parameter test conditions symbol value unit junction lead t l =constant r thjl 25 mounted on epoxyglass hard tissue 150 k/w junction ambient mounted on epoxyglass hard tissue, 50mm 2 35  m cu r thja 125 k/w mounted on aloxidceramic (al 2 o 3 ), 50mm 2 35  m cu thja 100 electrical characteristics t j = 25  c parameter test conditions type symbol min max unit forward voltage i f =1a v f 750 mv reverse current v r =v rrm i r 100  a reverse current v r =v rrm , t j =100  c i r 1 ma
ratings and characteristic curves BYS11-90 2 of 2 e-mail: sales@taychipst.com web site: www.taychipst.com 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 200 95 9715 p maximum reverse power dissipation ( w ) r t j junction temperature ( c ) r thja =25k/w r thja =100k/w v r =v rrm figure 1. max. reverse power dissipation vs. junction temperature 0 40 80 120 160 0.1 1 10 100 1000 200 95 9716 i reverse current ( ma ) r t j junction temperature ( c ) v r =v rrm figure 2. max. reverse current vs. junction temperature 0 0 0.4 0.8 1.2 1.6 2.0 i average forward current ( a ) fav t amb ambient temperature ( c ) 95 9717 40 80 120 160 200 v r =v rrm , half sinewave, r thja =25k/w figure 3. max. average forward current vs. ambient temperature 0 0 0.4 0.8 1.2 1.6 2.0 i average forward current ( a ) fav t amb ambient temperature ( c ) 95 9718 40 80 120 160 200 v r = 0 v, half sinewave 100k/w 125k/w 150k/w r thja =25k/w figure 4. max. average forward current vs. ambient temperature i forward current ( a) 0.001 0.010 0.100 1.000 10.000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v f forward voltage ( v ) 16469 f t j =25 c t j = 150 c figure 5. forward current vs. forward voltage 0 20 40 60 80 100 120 140 160 180 0.1 1.0 10.0 100.0 v r reverse voltage ( v ) 16470 c diode capacitance ( pf ) d f=1mhz figure 6. diode capacitance vs. reverse voltage 90v 1.5a BYS11-90 schottky barrier rectifier


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